Stability of a circuit operation in a monolithic gate driver is improved. A bistable circuit is provided with a charge replenishment circuit (71) including: a capacitor (CAP2); a thin-film transistor (MA) having a first electrode supplied with a first clock for charge replenishment (CKA), a second electrode connected to a third-node (N3) connected to one end of the capacitor (CAP2), and a third electrode connected to a second-node (N2) to be maintained at the high level during a normal operation period; and a thin-film transistor (MB) having a first electrode supplied with a second clock for charge replenishment (CKB), a second electrode supplied with a high-level DC power supply potential (VDD), and a third electrode connected to the third-node (N3). The first clock for charge replenishment (CKA) and the second clock for charge replenishment (CKB) are alternately driven to the high level so as to eliminate a period in which “the first clock for charge replenishment (CKA) is at the high level and the second clock for charge replenishment (CKB) is at the high level”.