发明申请
- 专利标题: GERMANIUM-CONTAINING RELEASE LAYER FOR TRANSFER OF A SILICON LAYER TO A SUBSTRATE
- 专利标题(中): 用于将硅层转移到基板的含锗包装层
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申请号: US13616322申请日: 2012-09-14
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公开(公告)号: US20130015455A1公开(公告)日: 2013-01-17
- 发明人: Stephen W. Bedell , Keith E. Fogel , Daniel A. Inns , Jeehwan Kim , Davendra k. Sadana , Katherine L. Saenger
- 申请人: Stephen W. Bedell , Keith E. Fogel , Daniel A. Inns , Jeehwan Kim , Davendra k. Sadana , Katherine L. Saenger
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L29/38
- IPC分类号: H01L29/38
摘要:
A germanium-containing layer is deposited on a single crystalline bulk silicon substrate in an ambient including a level of oxygen partial pressure sufficient to incorporate 1%-50% of oxygen in atomic concentration. The thickness of the germanium-containing layer is preferably limited to maintain some degree of epitaxial alignment with the underlying silicon substrate. Optionally, a graded germanium-containing layer can be grown on, or replace, the germanium-containing layer. An at least partially crystalline silicon layer is subsequently deposited on the germanium-containing layer. A handle substrate is bonded to the at least partially crystalline silicon layer. The assembly of the bulk silicon substrate, the germanium-containing layer, the at least partially crystalline silicon layer, and the handle substrate is cleaved within the germanium-containing layer to provide a composite substrate including the handle substrate and the at least partially crystalline silicon layer. Any remaining germanium-containing layer on the composite substrate is removed.