发明申请
US20130015470A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
半导体发光元件

  • 专利标题: SEMICONDUCTOR LIGHT EMITTING ELEMENT
  • 专利标题(中): 半导体发光元件
  • 申请号: US13638470
    申请日: 2011-03-24
  • 公开(公告)号: US20130015470A1
    公开(公告)日: 2013-01-17
  • 发明人: Hidetoshi TanakaMitsumasa Takeda
  • 申请人: Hidetoshi TanakaMitsumasa Takeda
  • 优先权: JP2010-079951 20100331; JP2010-217050 20100928
  • 国际申请: PCT/JP2011/057147 WO 20110324
  • 主分类号: H01L33/36
  • IPC分类号: H01L33/36
SEMICONDUCTOR LIGHT EMITTING ELEMENT
摘要:
A semiconductor light emitting device in which adhesion between an insulating layer and a semiconductor layer is improved while maintaining the ability of the insulating layer to limit the direction of current flow.The semiconductor light emitting device of the present invention includes a semiconductor layer, a first electrode and a second electrode arranged to interpose the semiconductor layer therebetween, an insulating layer provided to the semiconductor layer at the same side as the second electrode and opposite to the first electrodes so as to surround the periphery of the second electrode, a first metal layer covering the second electrode and the insulating layer, and a second metal layer which has a thickness smaller than the thickness of the second electrode and is provided between the semiconductor layer and the insulating layer.
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