发明申请
US20130015550A1 JUNCTION BARRIER SCHOTTKY DIODE WITH ENFORCED UPPER CONTACT STRUCTURE AND METHOD FOR ROBUST PACKAGING
有权
具有强化接触结构的结构障碍物肖特基二极管和用于稳定包装的方法
- 专利标题： JUNCTION BARRIER SCHOTTKY DIODE WITH ENFORCED UPPER CONTACT STRUCTURE AND METHOD FOR ROBUST PACKAGING
- 专利标题（中）： 具有强化接触结构的结构障碍物肖特基二极管和用于稳定包装的方法
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申请号： US13184488申请日： 2011-07-15
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公开(公告)号： US20130015550A1公开(公告)日： 2013-01-17
- 发明人: Anup Bhalla , Ji Pan , Daniel Ng
- 申请人： Anup Bhalla , Ji Pan , Daniel Ng
- 主分类号： H01L29/872
- IPC分类号： H01L29/872 ; H01L21/283
摘要：
A semiconductor junction barrier Schottky (JBS-SKY) diode with enforced upper contact structure (EUCS) is disclosed. Referencing an X-Y-Z coordinate, the JBS-SKY diode has semiconductor substrate (SCST) parallel to X-Y plane. Active device zone (ACDZ) atop SCST and having a JBS-SKY diode with Z-direction current flow. Peripheral guarding zone (PRGZ) atop SCST and surrounding the ACDZ. The ACDZ has active lower semiconductor structure (ALSS) and enforced active upper contact structure (EUCS) atop ALSS. The EUC has top contact metal (TPCM) extending downwards and in electrical conduction with bottom of EUCS; and embedded bottom supporting structure (EBSS) inside TPCM and made of a hard material, the EBSS extending downwards till bottom of the EUCS. Upon encountering bonding force onto TPCM during packaging of the JBS-SKY diode, the EBSS enforces the EUCS against an otherwise potential micro cracking of the TPCM degrading the leakage current of the JBS-SKY diode.
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