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发明申请
US20130017663A1 METHOD OF FORMING A PHASE CHANGE MATERIAL LAYER PATTERN AND METHOD OF MANUFACTURING A PHASE CHANGE MEMORY DEVICE 有权
形成相变材料层图案的方法和制造相变存储器件的方法

METHOD OF FORMING A PHASE CHANGE MATERIAL LAYER PATTERN AND METHOD OF MANUFACTURING A PHASE CHANGE MEMORY DEVICE
摘要：
A method of forming a phase change material layer pattern includes forming a phase change material layer partially filling an opening through an insulating interlayer. A plasma treatment process is performed on the phase change material layer to remove an oxide layer on a surface of the phase change material layer. A heat treatment process is performed on the phase change material layer to remove a void or a seam in the phase change material layer, sufficiently filling the opening.
摘要（中）：

形成相变材料层图案的方法包括：通过绝缘中间层形成部分填充开口的相变材料层。 在相变材料层上进行等离子体处理工艺以去除相变材料层的表面上的氧化物层。 在相变材料层上进行热处理工艺以去除相变材料层中的空隙或接缝，充分填充开口。

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