发明申请
- 专利标题： Shallow Trench Isolation Structure, Manufacturing Method Thereof and a Device Based on the Structure
- 专利标题（中）： 浅沟槽隔离结构及其制造方法及其结构设备
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申请号： US13519573申请日： 2011-08-03
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公开(公告)号： US20130020653A1公开(公告)日： 2013-01-24
- 发明人: Jiang Yan
- 申请人： Jiang Yan
- 优先权： CN201110099133.5 20110420
- 国际申请： PCT/CN2011/001281 WO 20110803
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L27/092 ; H01L21/302
摘要：
The present invention relates to a shallow trench isolation structure, manufacturing method thereof and a device based on the structure. The present invention provides a method for manufacturing a shallow trench isolation (STI) structure, characterized in comprising the following steps: providing a semiconductor substrate; forming an insulating medium on said semiconductor substrate; etching a part of the insulating medium by using a mask to expose the semiconductor substrate thereunder, the unetched insulating medium forming STI regions; and epitaxially growing a semiconductor layer on said semiconductor substrate between said STI regions as an active region. With the method provided by the present invention, the problem of filling a small-size trench is solved and the problem of STI step height is overcome.