发明申请
- 专利标题： NOVEL CMOS IMAGE SENSOR STRUCTURE
- 专利标题（中）： 新型CMOS图像传感器结构
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申请号： US13185204申请日： 2011-07-18
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公开(公告)号： US20130020662A1公开(公告)日： 2013-01-24
- 发明人: Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Wen-De Wang
- 申请人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Wen-De Wang
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L31/02
- IPC分类号： H01L31/02
摘要：
Provided is a method of fabricating an image sensor device. The method includes providing a first substrate having a radiation-sensing region disposed therein. The method includes providing a second substrate having a hydrogen implant layer, the hydrogen implant layer dividing the second substrate into a first portion and a second portion. The method includes bonding the first portion of the second substrate to the first substrate. The method includes after the bonding, removing the second portion of the second substrate. The method includes after the removing, forming one or more microelectronic devices in the first portion of the second substrate. The method includes forming an interconnect structure over the first portion of the second substrate, the interconnect structure containing interconnect features that are electrically coupled to the microelectronic devices.
公开/授权文献
- US08564085B2 CMOS image sensor structure 公开/授权日：2013-10-22
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