发明申请
US20130021304A1 PIEZOELECTRIC LATERALLY VIBRATING RESONATOR STRUCTURES WITH ACOUSTICALLY COUPLED SUB-RESONATORS
审中-公开
具有声学耦合子谐振器的压电侧向振动谐振器结构
- 专利标题: PIEZOELECTRIC LATERALLY VIBRATING RESONATOR STRUCTURES WITH ACOUSTICALLY COUPLED SUB-RESONATORS
- 专利标题(中): 具有声学耦合子谐振器的压电侧向振动谐振器结构
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申请号: US13186277申请日: 2011-07-19
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公开(公告)号: US20130021304A1公开(公告)日: 2013-01-24
- 发明人: Chengjie Zuo , Chi Shun Lo , Changhan Yun , Jonghae Kim
- 申请人: Chengjie Zuo , Chi Shun Lo , Changhan Yun , Jonghae Kim
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM MEMS TECHNOLOGIES, INC.
- 当前专利权人: QUALCOMM MEMS TECHNOLOGIES, INC.
- 当前专利权人地址: US CA San Diego
- 主分类号: G06F3/038
- IPC分类号: G06F3/038 ; H01L41/047
摘要:
This disclosure provides implementations of electromechanical systems resonator structures, devices, apparatus, systems, and related processes. A resonator structure generally includes a first conductive layer with an input electrode, an output electrode, and a ground electrode. The ground electrode is disposed between the input electrode and the output electrode. In some implementations, the second conductive layer includes an input electrode, an output electrode, and a ground electrode. In some other implementations, a second conductive layer includes a pair of ground electrodes and a signal electrode in the form of an input or output electrode disposed between the ground electrodes. A piezoelectric layer is disposed between the first conductive layer and the second conductive layer. Sub-resonators can be defined in different regions of the structure, such that the piezoelectric layer is capable of moving to produce an output signal having frequencies at a first resonant frequency and a second resonant frequency.