发明申请
US20130023079A1 FABRICATION OF LIGHT EMITTING DIODES (LEDS) USING A DEGAS PROCESS
审中-公开
使用DEGAS工艺制造发光二极管（LED）
- 专利标题： FABRICATION OF LIGHT EMITTING DIODES (LEDS) USING A DEGAS PROCESS
- 专利标题（中）： 使用DEGAS工艺制造发光二极管（LED）
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申请号： US13552344申请日： 2012-07-18
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公开(公告)号： US20130023079A1公开(公告)日： 2013-01-24
- 发明人: Sang Won Kang , Jiang Lu , Hua Chung , Juno Yu-Ting Huang , Wei-Yung Hsu
- 申请人： Sang Won Kang , Jiang Lu , Hua Chung , Juno Yu-Ting Huang , Wei-Yung Hsu
- 主分类号： H01L33/04
- IPC分类号： H01L33/04
摘要：
Methods of fabricating light emitting diodes using a degas process are described. For example, a method includes providing a partially formed group III-V material layer stack of an LED. Contaminants are removed from the partially formed group III-V material layer stack by a degas process. Formation of the group III-V material layer stack of the LED is then completed.
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