发明申请
US20130026414A1 SILICATE-BASED PHOSPHOR AND MANUFACTURING METHOD OF SILICATE-BASED PHOSPHOR
有权
基于硅酸盐的磷光体和基于硅酸盐的磷的制造方法
- 专利标题: SILICATE-BASED PHOSPHOR AND MANUFACTURING METHOD OF SILICATE-BASED PHOSPHOR
- 专利标题(中): 基于硅酸盐的磷光体和基于硅酸盐的磷的制造方法
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申请号: US13640412申请日: 2011-04-12
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公开(公告)号: US20130026414A1公开(公告)日: 2013-01-31
- 发明人: Kenji Toda , Mineo Sato , Kazuyoshi Uematsu , Tadashi Ishigaki , Hideo Suda , Etsuko Minegishi , Yoshiaki Kudo
- 申请人: Kenji Toda , Mineo Sato , Kazuyoshi Uematsu , Tadashi Ishigaki , Hideo Suda , Etsuko Minegishi , Yoshiaki Kudo
- 优先权: JP2010-092592 20100413
- 国际申请: PCT/JP2011/059090 WO 20110412
- 主分类号: C09K11/79
- IPC分类号: C09K11/79
摘要:
There are provide a silicate-based phosphor excellent in emission intensity and a manufacturing method of the same. A manufacturing method of a silicate-based phosphor is characterized by: introducing in a vessel raw material powders having a compound containing light-emitting ions selected from at least one of Eu, Ce, Mn, and Tb; and firing the raw material powders while supplying SiOx (0.5≦x≦1.9, preferably, 0.8≦x≦1.2) in a gas phase. The raw material powders preferably further contains at least one of an alkali metal compound, an alkaline-earth metal compound, a magnesium compound, and a rare-earth compound. The silicate-based phosphor is preferably M2SiO4:Eu2+ (wherein M is one or more selected from a group consisting of Ca, Sr and Ba). The firing is preferably performed by supplying the SiOx to the raw material powders in a gas atmosphere at a temperature of 1200 to 1700° C. and subjecting the raw material powders to a gas-solid phase reaction at a temperature of 700 to 1700° C.
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