Invention Application
- Patent Title: QUANTUM DOT OPTOELECTRONIC DEVICE AND METHODS THEREFOR
- Patent Title (中): 量子光电器件及其方法
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Application No.: US13190884Application Date: 2011-07-26
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Publication No.: US20130026445A1Publication Date: 2013-01-31
- Inventor: Farzad PARSAPOUR
- Applicant: Farzad PARSAPOUR
- Main IPC: H01L33/04
- IPC: H01L33/04 ; H01L31/0352 ; H01L29/12

Abstract:
An optoelectronic device and method for fabricating optoelectronic device, comprising: forming a quantum dot layer on a substrate including at least one electronically conductive layer, including a plurality of quantum dots which have organic capping layers; and removing organic capping layers from the quantum dots of the quantum dot layer by physically treating the quantum dot layer, the physical treatment including both thermal treatment and plasma processing.
Public/Granted literature
- US09431622B2 Quantum dot optoelectronic device and methods therfor Public/Granted day:2016-08-30
Information query
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