发明申请
- 专利标题: SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件
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申请号: US13559461申请日: 2012-07-26
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公开(公告)号: US20130026580A1公开(公告)日: 2013-01-31
- 发明人: Masao Morimoto , Noriaki Maeda , Yasuhisa Shimazaki
- 申请人: Masao Morimoto , Noriaki Maeda , Yasuhisa Shimazaki
- 专利权人: RENESAS ELELCTRONICS CORPORATION
- 当前专利权人: RENESAS ELELCTRONICS CORPORATION
- 优先权: JP2011-162953 20110726
- 主分类号: H01L27/11
- IPC分类号: H01L27/11
摘要:
A semiconductor device having an SRAM which includes: a monolithic first active region in which a first transistor and a fifth transistor are disposed; a second active region separated from the first active region, in which a second transistor is disposed; a monolithic third active region in which a third transistor and a sixth transistor are disposed; and a fourth active region separated from the third active region, in which a fourth transistor is disposed. Each driver transistor is divided into a first transistor and a second transistor (or a third transistor and a fourth transistor) and these driver transistors are disposed over different active regions.