- 专利标题: CoFe/Ni Multilayer Film with Perpendicular Anisotropy for Microwave Assisted Magnetic Recording
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申请号: US13645947申请日: 2012-10-05
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公开(公告)号: US20130029182A1公开(公告)日: 2013-01-31
- 发明人: Kunliang Zhang , Min Li , Yuchen Zhou
- 申请人: Kunliang Zhang , Min Li , Yuchen Zhou
- 申请人地址: US CA Milpitas
- 专利权人: HEADWAY TECHNOLOGIES, INC.
- 当前专利权人: HEADWAY TECHNOLOGIES, INC.
- 当前专利权人地址: US CA Milpitas
- 主分类号: G11C7/00
- IPC分类号: G11C7/00
摘要:
A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.
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