发明申请
- 专利标题： METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE
- 专利标题（中）： 制造半导体发光器件的方法
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申请号： US13632856申请日： 2012-10-01
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公开(公告)号： US20130029440A1公开(公告)日： 2013-01-31
- 发明人: Ya-ju LEE , Ta-Cheng Hsu , Ming-Ta Chin , Yen-Wen Chen , Lo Wu-Tsung , Chung-Yuan Li , Min-Hsun Hsieh
- 申请人： Ya-ju LEE , Ta-Cheng Hsu , Ming-Ta Chin , Yen-Wen Chen , Lo Wu-Tsung , Chung-Yuan Li , Min-Hsun Hsieh
- 申请人地址： TW Hsinchu
- 专利权人： Epistar Corporation
- 当前专利权人： Epistar Corporation
- 当前专利权人地址： TW Hsinchu
- 优先权： TW95110538 20060327
- 主分类号： H01L33/22
- IPC分类号： H01L33/22
摘要：
A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a substrate. The substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0 11] or [01 1] from [100], or toward [011] or [0 11] from [ 100] so that the upper surface of the substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.