发明申请
- 专利标题: PLASMA ASSISTED HVPE CHAMBER DESIGN
- 专利标题(中): 等离子体辅助HVPE室设计
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申请号: US13456693申请日: 2012-04-26
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公开(公告)号: US20130032085A1公开(公告)日: 2013-02-07
- 发明人: Hiroji HANAWA , Yuriy Melnik , Donald J.K. Olgado , Karl M. Brown , Son T. Nguyen , Kevin S. Griffin
- 申请人: Hiroji HANAWA , Yuriy Melnik , Donald J.K. Olgado , Karl M. Brown , Son T. Nguyen , Kevin S. Griffin
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: C30B25/14
- IPC分类号: C30B25/14 ; C30B25/02
摘要:
Embodiments of the invention disclosed herein generally relate to a hydride vapor phase epitaxy (HVPE) deposition chamber that utilizes a plasma generation apparatus to form an activated precursor gas that is used to rapidly form a high quality compound nitride layer on a surface of a substrate. In one embodiment, the plasma generation apparatus is used to create a desirable group-III metal halide precursor gas that can enhance the deposition reaction kinetics, and thus reduce the processing time and improve the film quality of a formed group-III metal nitride layer. In addition, the chamber may be equipped with a separate nitrogen containing precursor activated species generator to enhance the activity of the delivered nitrogen precursor gases.