发明申请
- 专利标题： ATOMIC LAYER DEPOSITION OF METAL OXIDES FOR MEMORY APPLICATIONS
- 专利标题（中）： 原子层沉积金属氧化物存储器应用
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申请号： US13198837申请日： 2011-08-05
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公开(公告)号： US20130034947A1公开(公告)日： 2013-02-07
- 发明人: Zhendong Hong , Hieu Pham , Randall Higuchi , Vidyut Gopal , Imran Hashim
- 申请人： Zhendong Hong , Hieu Pham , Randall Higuchi , Vidyut Gopal , Imran Hashim
- 申请人地址： US CA San Jose
- 专利权人： INTERMOLECULAR, INC.
- 当前专利权人： INTERMOLECULAR, INC.
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; B82Y40/00
摘要：
Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack which contains at least one hard metal oxide film (e.g., metal is completely oxidized or substantially oxidized) and at least one soft metal oxide film (e.g., metal is less oxidized than hard metal oxide). The soft metal oxide film is less electrically resistive than the hard metal oxide film since the soft metal oxide film is less oxidized or more metallic than the hard metal oxide film. In one example, the hard metal oxide film is formed by an ALD process utilizing ozone as the oxidizing agent while the soft metal oxide film is formed by another ALD process utilizing water vapor as the oxidizing agent.
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