Invention Application
- Patent Title: CRYSTALLIZATION METHOD OF THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD FOR THIN FILM TRANSISTOR ARRAY PANEL
- Patent Title (中): 薄膜晶体管,薄膜晶体管阵列的结晶方法和薄膜晶体管阵列的制造方法
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Application No.: US13535007Application Date: 2012-06-27
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Publication No.: US20130037813A1Publication Date: 2013-02-14
- Inventor: Joo-Han Kim , Hwa-Dong Jung , Wan-Soon Lim , Jee-Hun Lim , Joo Seok Yeom , Tae-Kyung Yim , Jae-Hak Lee , Hyuk Soon Kwon , Hyoung Cheol Lee , Jeong-Ju Park , Se-Myung Kwon , So-Young Koo
- Applicant: Joo-Han Kim , Hwa-Dong Jung , Wan-Soon Lim , Jee-Hun Lim , Joo Seok Yeom , Tae-Kyung Yim , Jae-Hak Lee , Hyuk Soon Kwon , Hyoung Cheol Lee , Jeong-Ju Park , Se-Myung Kwon , So-Young Koo
- Applicant Address: KR Yongin-si
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Priority: KR10-2011-0080820 20110812
- Main IPC: H01L33/08
- IPC: H01L33/08

Abstract:
Exemplary embodiments of the invention disclose a method of manufacturing a thin film transistor array panel having reduced overall processing time and providing a uniform crystallization. Exemplary embodiments of the invention also disclose a crystallization method of a thin film transistor, including forming on a substrate a semiconductor layer including a first pixel area, a second pixel area, and a third pixel area. The crystallization method includes crystallizing a portion of the semiconductor layer corresponding to a channel region of a thin film transistor using a micro lens array.
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