Invention Application
US20130037898A1 Memory Array Including Magnetic Random Access Memory Cells and Oblique Field Lines 有权
包括磁性随机存取存储单元和斜域的存储器阵列

Memory Array Including Magnetic Random Access Memory Cells and Oblique Field Lines
Abstract:
A memory device includes a first plurality of magnetic random access memory (MRAM) cells positioned along a first direction, and a first bit line electrically connected to the first plurality of MRAM cells, the bit line oriented in the first direction. The device includes a first plurality of field lines oriented in a second direction different from the first direction, the first plurality of field lines being spaced such that only a corresponding first one of the first plurality of MRAM cells is configurable by each of the first plurality of field lines. The device includes a second plurality of field lines oriented in a third direction different from the first direction and the second direction, the second plurality of field lines being spaced such that only a corresponding second one of the first plurality of MRAM cells is configurable by each of the second plurality of field lines.
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