Invention Application
US20130037898A1 Memory Array Including Magnetic Random Access Memory Cells and Oblique Field Lines
有权
包括磁性随机存取存储单元和斜域的存储器阵列
- Patent Title: Memory Array Including Magnetic Random Access Memory Cells and Oblique Field Lines
- Patent Title (中): 包括磁性随机存取存储单元和斜域的存储器阵列
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Application No.: US13572566Application Date: 2012-08-10
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Publication No.: US20130037898A1Publication Date: 2013-02-14
- Inventor: Bertrand F. Cambou , Douglas J. Lee , Anthony J. Tether , Barry Hoberman
- Applicant: Bertrand F. Cambou , Douglas J. Lee , Anthony J. Tether , Barry Hoberman
- Applicant Address: US CA Sunnyvale
- Assignee: CROCUS TECHNOLOGY, INC.
- Current Assignee: CROCUS TECHNOLOGY, INC.
- Current Assignee Address: US CA Sunnyvale
- Main IPC: H01L27/22
- IPC: H01L27/22
Abstract:
A memory device includes a first plurality of magnetic random access memory (MRAM) cells positioned along a first direction, and a first bit line electrically connected to the first plurality of MRAM cells, the bit line oriented in the first direction. The device includes a first plurality of field lines oriented in a second direction different from the first direction, the first plurality of field lines being spaced such that only a corresponding first one of the first plurality of MRAM cells is configurable by each of the first plurality of field lines. The device includes a second plurality of field lines oriented in a third direction different from the first direction and the second direction, the second plurality of field lines being spaced such that only a corresponding second one of the first plurality of MRAM cells is configurable by each of the second plurality of field lines.
Public/Granted literature
- US08587079B2 Memory array including magnetic random access memory cells and oblique field lines Public/Granted day:2013-11-19
Information query
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