Invention Application
US20130037965A1 THREE-DIMENSIONAL INTEGRATED CIRCUIT, PROCESSOR, SEMICONDUCTOR CHIP, AND MANUFACTURING METHOD OF THREE-DIMENSIONAL INTEGRATED CIRCUIT 有权
三维集成电路的三维集成电路,处理器,半导体芯片和三维集成电路的制造方法

  • Patent Title: THREE-DIMENSIONAL INTEGRATED CIRCUIT, PROCESSOR, SEMICONDUCTOR CHIP, AND MANUFACTURING METHOD OF THREE-DIMENSIONAL INTEGRATED CIRCUIT
  • Patent Title (中): 三维集成电路的三维集成电路,处理器,半导体芯片和三维集成电路的制造方法
  • Application No.: US13637729
    Application Date: 2012-04-02
  • Publication No.: US20130037965A1
    Publication Date: 2013-02-14
  • Inventor: Takashi MorimotoTakeshi NakayamaTakashi Hashimoto
  • Applicant: Takashi MorimotoTakeshi NakayamaTakashi Hashimoto
  • Priority: JP2011-110027 20110517
  • International Application: PCT/JP2012/002260 WO 20120402
  • Main IPC: H01L23/485
  • IPC: H01L23/485 H01L21/768
THREE-DIMENSIONAL INTEGRATED CIRCUIT, PROCESSOR, SEMICONDUCTOR CHIP, AND MANUFACTURING METHOD OF THREE-DIMENSIONAL INTEGRATED CIRCUIT
Abstract:
One aspect of the present invention is a three-dimensional integrated circuit 1 including a first semiconductor chip and a second semiconductor chip that are layered on each other, wherein each of (i) a wiring layer closest to an interface between the first and second semiconductor chips among wiring layers of the first semiconductor chip and (ii) a wiring layer closest to the interface among wiring layers of the second semiconductor chip includes a power conductor area and a ground conductor area, a layout of the power conductor area and the ground conductor area in the first semiconductor chip is the same as a layout of the power conductor area and the ground conductor area in the second semiconductor chip, and the power conductor area in the first semiconductor chip at least partially faces the ground conductor area in the second semiconductor chip with an insulation layer therebetween.
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