发明申请
- 专利标题： 3-DIMENSIONAL NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 三维非易失性存储器件及其制造方法
-
申请号： US13585336申请日： 2012-08-14
-
公开(公告)号： US20130043521A1公开(公告)日： 2013-02-21
- 发明人: Young Kyun JUNG
- 申请人： Young Kyun JUNG
- 优先权： KR10-2011-0081288 20110816
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L21/762
摘要：
A method of manufacturing a 3-Dimensional (3-D) non-volatile memory device includes forming first material layers and second material layers alternately, forming at least one first trench by etching the first material layers and the second material layers, forming floating gate regions by recessing the second material layers, exposed to the first trench, forming a first charge blocking layer on surfaces of the first trench and the floating gate regions, forming a first conductive layer on the first charge blocking layer, etching the first conductive layer on the upper side of the first trench, forming a second charge blocking layer on the first charge blocking layer exposed by etching the first conductive layer, and forming floating gates in the respective floating gate regions by etching the first conductive layer.
信息查询
IPC分类:
