- 专利标题: Light emitting diode manufacturing method
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申请号: US13211378申请日: 2011-08-17
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公开(公告)号: US20130045552A1公开(公告)日: 2013-02-21
- 发明人: John W. Lyons , Binghe Gu , Allen S. Bulick , Weijun Zhou , Paul J. Popa , Garo Khanarian , John R. Ell
- 申请人: John W. Lyons , Binghe Gu , Allen S. Bulick , Weijun Zhou , Paul J. Popa , Garo Khanarian , John R. Ell
- 申请人地址: US MA Marlborough
- 专利权人: ROHM AND HAAS ELECTRONIC MATERIALS LLC
- 当前专利权人: ROHM AND HAAS ELECTRONIC MATERIALS LLC
- 当前专利权人地址: US MA Marlborough
- 主分类号: H01L33/58
- IPC分类号: H01L33/58
摘要:
A method of making a light emitting diode (LED) having an optical element is provided, comprising: providing a curable liquid polysiloxane/TiO2 composite, which exhibits a refractive index of >1.61 to 1.7 and which is a liquid at room temperature and atmospheric pressure; providing a semiconductor light emitting diode die having a face, wherein the semiconductor light emitting diode die emits light through the face; contacting the semiconductor light emitting diode die with the curable liquid polysiloxane/TiO2 composite; and, curing the curable liquid polysiloxane/TiO2 composite to form an optical element; wherein at least a portion of the optical element is adjacent to the face.
公开/授权文献
- US08450445B2 Light emitting diode manufacturing method 公开/授权日:2013-05-28
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