发明申请
- 专利标题: ESD PROTECTION TECHNIQUES
- 专利标题(中): ESD保护技术
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申请号: US13217533申请日: 2011-08-25
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公开(公告)号: US20130050885A1公开(公告)日: 2013-02-28
- 发明人: Bo-Ting Chen , Tzu-Heng Chang
- 申请人: Bo-Ting Chen , Tzu-Heng Chang
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H02H9/04
- IPC分类号: H02H9/04
摘要:
Some embodiments relate to an electrostatic discharge (ESD) protection device to protect a circuit that is electrically connected to first and second circuit nodes from an ESD event. The ESD protection device includes a first electrical path extending between the first and second circuit nodes and including first and second ESD detection elements arranged thereon. The ESD protection device also includes first and second voltage bias elements having respective inputs electrically connected to respective outputs of the first and second ESD detection elements. A second electrical path extends between the first and second circuit nodes and is in parallel with the first electrical path. The second electrical path includes a voltage controlled shunt network having at least two control terminals electrically connected to respective outputs of the first and second voltage bias elements. Other embodiments are also disclosed.
公开/授权文献
- US08867183B2 ESD protection techniques 公开/授权日:2014-10-21