发明申请
US20130051120A1 CIRCUIT FOR GENERATING WRITE SIGNAL, VARIABLE RESISTANCE MEMORY DEVICE, AND METHOD FOR PROGRAMMING VARIABLE RESISTANCE MEMORY
有权
用于产生写入信号的电路，可变电阻存储器件以及编程可变电阻存储器的方法
- 专利标题： CIRCUIT FOR GENERATING WRITE SIGNAL, VARIABLE RESISTANCE MEMORY DEVICE, AND METHOD FOR PROGRAMMING VARIABLE RESISTANCE MEMORY
- 专利标题（中）： 用于产生写入信号的电路，可变电阻存储器件以及编程可变电阻存储器的方法
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申请号： US13369361申请日： 2012-02-09
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公开(公告)号： US20130051120A1公开(公告)日： 2013-02-28
- 发明人: YOUNG-HOON OH , YOUNG-DON CHOI , ICK-HYUN SONG
- 申请人： YOUNG-HOON OH , YOUNG-DON CHOI , ICK-HYUN SONG
- 申请人地址： KR SUWON-SI
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR SUWON-SI
- 优先权： KR10-2011-0084137 20110823
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C7/06
摘要：
A circuit for generating a write signal includes a pre-emphasis signal generator that receives location information of a to-be-programmed memory cell and generates a pre-emphasis signal depending on the location information of the to-be-programmed memory cell, and a write driver that generates a program signal corresponding to data to be programmed in the to-be-programmed memory cell. A write signal is generated by combining the program signal with the pre-emphasis signal supplied from the pre-emphasis signal generator, and the write signal output to the to-be-programmed memory cell.