发明申请
- 专利标题： METHOD OF FABRICATING VERTICAL TYPE LIGHT-EMITTING DIODE AND METHOD OF SEPARATING LAYERS FROM EACH OTHER
- 专利标题（中）： 制造垂直型发光二极管的方法和从其他各种分离层的方法
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申请号： US13696490申请日： 2010-07-22
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公开(公告)号： US20130052767A1公开(公告)日： 2013-02-28
- 发明人: Ki-Seok Kim , Gun-Young Jung
- 申请人： Ki-Seok Kim , Gun-Young Jung
- 申请人地址： KR Buk-gu, Gwangju
- 专利权人： GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
- 当前专利权人： GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
- 当前专利权人地址： KR Buk-gu, Gwangju
- 优先权： KR10-2010-0042341 20100506
- 国际申请： PCT/KR10/04809 WO 20100722
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L21/20 ; H01L33/02
摘要：
The present invention provides a method of fabricating a vertical type light-emitting diode and a method of separating layers from each other. Crystalline rods are provided on a lower layer or a lower substrate. The crystalline rods comprise ZnO. A layer which constitutes light-emitting diode or a light-emitting diode structure is formed on the crystalline rods, and the lower substrate is separated therefrom. The crystalline rods are dissolved during the separation. The formation of the crystalline rods is achieved by the formation of a seed layer and selective growth based on the seed layer
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