发明申请
- 专利标题： SEMICONDUCTOR PROCESS
- 专利标题（中）： 半导体工艺
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申请号： US13216259申请日： 2011-08-24
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公开(公告)号： US20130052778A1公开(公告)日： 2013-02-28
- 发明人: Chin-I Liao , Chia-Lin Hsu , Ming-Yen Li , Hsin-Huei Wu , Yung-Lun Hsieh , Chien-Hao Chen , Bo-Syuan Lee
- 申请人： Chin-I Liao , Chia-Lin Hsu , Ming-Yen Li , Hsin-Huei Wu , Yung-Lun Hsieh , Chien-Hao Chen , Bo-Syuan Lee
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A semiconductor process includes the following steps. A substrate is provided. At least a fin-shaped structure is formed on the substrate. An oxide layer is formed on the substrate without the fin-shaped structure being formed thereon. A gate is formed to cover a part of the oxide layer and a part of the fin-shaped structure. An etching process is performed to etch a part of the fin-shaped structure beside the gate, therefore at least a recess is formed in the fin-shaped structure. An epitaxial process is performed to form an epitaxial layer in the recess, wherein the epitaxial layer has a hexagon-shaped profile structure.
公开/授权文献
- US08674433B2 Semiconductor process 公开/授权日：2014-03-18