Disclosed herein are various methods of forming stressed silicon-carbon areas in an NMOS transistor device. In one example, a method disclosed herein includes forming a layer of amorphous carbon above a surface of a semiconducting substrate comprising a plurality of N-doped regions and performing an ion implantation process on the layer of amorphous carbon to dislodge carbon atoms from the layer of amorphous carbon and to drive the dislodged carbon atoms into the N-doped regions in the substrate.