发明申请
- 专利标题： NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US13420745申请日： 2012-03-15
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公开(公告)号： US20130056815A1公开(公告)日： 2013-03-07
- 发明人: Megumi ISHIDUKI , Masaru Kidoh , Mitsuru Sato , Masaru Kito , Ryota Katsumata
- 申请人： Megumi ISHIDUKI , Masaru Kidoh , Mitsuru Sato , Masaru Kito , Ryota Katsumata
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-191733 20110902
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
According to one embodiment, a nonvolatile semiconductor memory device includes: a first stacked body; a memory film; a first channel body layer provided inside the memory film; an interlayer insulating flm provided on the first stacked body; a second stacked body having a select gate electrode layer, and a second insulating layer; a gate insulating film provided on a side wall of a second hole communicating with the first hole and penetrating the second stacked body and the interlayer insulating flm in a stacking direction of the second stacked body; and a second channel body layer provided inside the gate insulating film in the second hole. A first pore diameter of the second hole at an upper end of the select gate electrode layer is smaller than a second pore diameter of the second hole at an lower end of the select gate electrode layer.
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