- 专利标题: Thermally Enhanced Structure for Multi-Chip Device
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申请号: US13224487申请日: 2011-09-02
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公开(公告)号: US20130056871A1公开(公告)日: 2013-03-07
- 发明人: Chen-Hua Yu , Chih-Hang Tung , Tung-Liang Shao
- 申请人: Chen-Hua Yu , Chih-Hang Tung , Tung-Liang Shao
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L23/498
- IPC分类号: H01L23/498 ; H01L21/60
摘要:
A multi-chip semiconductor device comprises a thermally enhanced structure, a first semiconductor chip, a second semiconductor chip, an encapsulation layer formed on top of the first semiconductor chip and the second semiconductor chip. The multi-chip semiconductor device further comprises a plurality of thermal vias formed in the encapsulation layer. The thermally enhanced structure comprises a heat sink block attached to a first semiconductor die. The heat sink block may further comprise a variety of thermal vias and thermal openings. By employing the thermal enhanced structure, the thermal performance of the multi-chip semiconductor device can be improved.
公开/授权文献
- US08531032B2 Thermally enhanced structure for multi-chip device 公开/授权日:2013-09-10
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