发明申请
- 专利标题： SYMMETRICALLY SWITCHABLE SPIN-TRANSFER-TORQUE MAGNETORESISTIVE DEVICE
- 专利标题（中）： 对称可转换转子 - 转矩磁阻器件
-
申请号： US13360530申请日： 2012-01-27
-
公开(公告)号： US20130062715A1公开(公告)日： 2013-03-14
- 发明人: Wei-Chuan Chen , Kangho Lee , Xiaochun Zhu , Seung H. Kang
- 申请人： Wei-Chuan Chen , Kangho Lee , Xiaochun Zhu , Seung H. Kang
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; H01L21/8246
摘要：
A spin transfer torque magnetic random access memory (STT-MRAM) device includes magnetic tunnel junctions (MTJs) with reduced switching current asymmetry. At least one switching asymmetry balance layer (SABL) near the free layer of the MTJ reduces a first switching current Ic(p-ap) causing the value of the first switching current to be nearly equal to the value of a second switching current Ic(ap-p) without increasing the average switching current of the device. The SABL may be a non-magnetic switching asymmetry balance layer (NM-SABL) and/or a magnetic switching asymmetry balance layer (M-SABL).
公开/授权文献
信息查询
IPC分类:
