Techniques for easily fabricating defect-free EUV masks with good yield are provided. A method of manufacturing an EUV mask according to the present invention includes the steps of: carrying out a defect inspection after depositing a multilayer film on a substrate; if a defect is found in the defect inspection, determining whether the defect is a recessed defect, a protruded defect, or defects in which the recessed defect and the protruded defect are mixed, and if the defects are the mixed defects of the recessed defect and the protruded defect, determining the relation in size between the defects; and depositing an additional multilayer film on the multilayer film while changing a film forming method in accordance with the results of the determination.