发明申请
- 专利标题： MULTILEVEL RESISTIVE MEMORY HAVING LARGE STORAGE CAPACITY
- 专利标题（中）： 具有大容量存储容量的多电阻存储器
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申请号： US13513155申请日： 2012-02-08
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公开(公告)号： US20130069031A1公开(公告)日： 2013-03-21
- 发明人: Ru Huang , Gengyu Yang , Yimao Cai , Yu Tang , Lijie Zhang , Yue Pan , Shenghu Tan , Yinglong Huang
- 申请人： Ru Huang , Gengyu Yang , Yimao Cai , Yu Tang , Lijie Zhang , Yue Pan , Shenghu Tan , Yinglong Huang
- 申请人地址： CN Beijing
- 专利权人： PEKING UNIVERSITY NO. 5 YIHEYUAN ROAD HAIDIAN DISTRICT
- 当前专利权人： PEKING UNIVERSITY NO. 5 YIHEYUAN ROAD HAIDIAN DISTRICT
- 当前专利权人地址： CN Beijing
- 优先权： CN201110274869.1 20110916
- 国际申请： PCT/CN12/70952 WO 20120208
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
The present invention discloses a multilevel resistive memory having large storage capacity, which belongs to a field of a fabrication technology of a resistive memory. The resistive memory includes an top electrode and a bottom electrode, and a combination of a plurality of switching layers and defective layers interposed between the top electrode and the bottom electrode, wherein, the top electrode and the bottom electrode are respectively contacted with a switching layer (a film such as Ta2O5, TiO2, HfO2), and the defective layers (metal film such as Ti, Au, Ag) are interposed between the switching layers. By using the present invention, a storage capacity of a resistive memory can be increased.
公开/授权文献
- US08633465B2 Multilevel resistive memory having large storage capacity 公开/授权日：2014-01-21
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