发明申请
- 专利标题： NITRIDE SEMICONDUCTOR DEVICE
- 专利标题（中）： 氮化物半导体器件
-
申请号： US13619560申请日： 2012-09-14
-
公开(公告)号： US20130069117A1公开(公告)日： 2013-03-21
- 发明人: Akira YOSHIOKA , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno , Wataru Saito
- 申请人： Akira YOSHIOKA , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno , Wataru Saito
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-206340 20110921
- 主分类号： H01L29/778
- IPC分类号： H01L29/778
摘要：
A nitride semiconductor device includes a substrate, a first Inx1Ga1-x1-y1Aly1N layer, a second Inx2Ga1-x2-y2Aly2N layer, an interlayer insulating film, a source electrode, a drain electrode, a first gate electrode, a Schottky electrode, a second gate electrode, an interconnection layer. The second Inx2Ga1-x2-y2Aly2N layer is provided on a surface of the first Inx1Ga1-x1-y1Aly1N layer. The second Inx2Ga1-x2-y2Aly2N layer has a wider band gap than the first Inx1Ga1-x1-y1Aly1N layer. The first gate electrode is provided between the source electrode and the drain electrode on a surface of the second Inx2Ga1-x2-y2Aly2N layer. The Schottky electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the first gate electrode and the drain electrode. The second gate electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the Schottky electrode and the drain electrode. The interconnection layer electrically connects the source electrode, the Schottky electrode, and the second gate electrode.
公开/授权文献
- US09082691B2 Nitride semiconductor device 公开/授权日：2015-07-14
信息查询
IPC分类:
