发明申请
- 专利标题： High Voltage Device and Manufacturing Method Thereof
- 专利标题（中）： 高压器件及其制造方法
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申请号： US13235366申请日： 2011-09-17
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公开(公告)号： US20130069153A1公开(公告)日： 2013-03-21
- 发明人: Tsung-Yi Huang , Chien-Hao Huang
- 申请人： Tsung-Yi Huang , Chien-Hao Huang
- 专利权人： Richtek Technology Corporation, R.O.C.
- 当前专利权人： Richtek Technology Corporation, R.O.C.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device includes: a substrate, having an isolation structure for defining a device region; a drift region located in the device region, wherein from top view, the drift region includes multiple sub-regions separated from one another but are electrically connected with one another; a source and a drain in the device region; and a gate on the surface of the substrate and between the source and drain in the device region.
公开/授权文献
- US08963237B2 High voltage device and manufacturing method thereof 公开/授权日：2015-02-24
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