发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13419882申请日： 2012-03-14
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公开(公告)号： US20130069195A1公开(公告)日： 2013-03-21
- 发明人: Kyoichi Suguro
- 申请人： Kyoichi Suguro
- 优先权： JP2011-205078 20110920
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L29/12
摘要：
According to one embodiment, a fabrication method for a semiconductor device includes: injecting an ion into a first substrate; joining the first substrate and a second substrate; irradiating a microwave to agglomerate the ion in a planar state in a desired position in the first substrate and form an agglomeration region spreading in a planar state; separating the second substrate provided with a part of the first substrate from the rest of the first substrate by exfoliating the joined first substrate from the second substrate in the agglomeration region; and grinding a part of the second substrate on a back surface opposite to an exfoliated surface in the second substrate provided with a part of the first substrate.
公开/授权文献
- US08836075B2 Semiconductor device and fabrication method thereof 公开/授权日：2014-09-16