- 专利标题： Semiconductor structure and method for making same
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申请号： US13233038申请日： 2011-09-15
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公开(公告)号： US20130069198A1公开(公告)日： 2013-03-21
- 发明人: Dieter Claeys , Bernd Eisener , Guenter Pfeifer , Detlef Wilhelm
- 申请人： Dieter Claeys , Bernd Eisener , Guenter Pfeifer , Detlef Wilhelm
- 主分类号： H01L29/02
- IPC分类号： H01L29/02 ; H01L21/02
摘要：
An embodiment may be a semiconductor structure, comprising; a workpiece having a front side and a back side; and a capacitor disposed in the workpiece, the capacitor including a bottom electrode electrically coupled to a back side of said workpiece. In an embodiment, the bottom electrode may form a conductive pathway to the front side of the workpiece. In an embodiment, the capacitor may be a trench capacitor.
公开/授权文献
- US08592883B2 Semiconductor structure and method for making same 公开/授权日：2013-11-26