发明申请
US20130069252A1 Semiconductor Device and Method of Forming Semiconductor Die with Active Region Responsive to External Stimulus
有权
半导体器件和形成具有响应于外部激发的有源区的半导体管芯的方法
- 专利标题: Semiconductor Device and Method of Forming Semiconductor Die with Active Region Responsive to External Stimulus
- 专利标题(中): 半导体器件和形成具有响应于外部激发的有源区的半导体管芯的方法
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申请号: US13545887申请日: 2012-07-10
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公开(公告)号: US20130069252A1公开(公告)日: 2013-03-21
- 发明人: Byung Joon Han , Il Kwon Shim , Heap Hoe Kuan
- 申请人: Byung Joon Han , Il Kwon Shim , Heap Hoe Kuan
- 申请人地址: SG Singapore
- 专利权人: STATS CHIPPAC, LTD.
- 当前专利权人: STATS CHIPPAC, LTD.
- 当前专利权人地址: SG Singapore
- 主分类号: H01L23/28
- IPC分类号: H01L23/28 ; H01L21/56
摘要:
A semiconductor device has a first semiconductor die including an active region formed on a surface of the first semiconductor die. The active region of the first semiconductor die can include a sensor. An encapsulant is deposited over the first semiconductor die. A conductive layer is formed over the encapsulant and first semiconductor die. An insulating layer can be formed over the first semiconductor die. An opening is formed in the insulating layer over the active region. A transmissive layer is formed over the first semiconductor die including the active region. The transmissive layer includes an optical dielectric material or an optical transparent or translucent material. The active region is responsive to an external stimulus passing through the transmissive layer. A plurality of bumps is formed through the encapsulant and electrically connected to the conductive layer. A second semiconductor die is disposed adjacent to the first semiconductor die.
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