发明申请
- 专利标题: SUBSTRATE BIAS DURING PROGRAM OF NON-VOLATILE STORAGE
- 专利标题(中): 非挥发性储存程序期间的基板偏差
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申请号: US13234539申请日: 2011-09-16
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公开(公告)号: US20130070531A1公开(公告)日: 2013-03-21
- 发明人: Dengtao Zhao , Guirong Liang , Deepanshu Dutta
- 申请人: Dengtao Zhao , Guirong Liang , Deepanshu Dutta
- 主分类号: G11C16/10
- IPC分类号: G11C16/10
摘要:
A programming technique which reduces program disturb in a non-volatile storage system is disclosed. A positive voltage may be applied to a substrate (e.g., p-well) during programming. Biasing the substrate may improve boosting of channels of unselected NAND strings, which may reduce program disturb. The substrate may be charged up during the programming operation, and discharged after programming. Therefore, for operations such as verify and read, the substrate may be grounded. In one embodiment, the substrate is charged just prior to applying a program pulse, then discharged prior to a program verify operation. In one embodiment, the substrate is charged while unselected word lines are ramped up to a pass voltage. The substrate bias may depend on program voltage, temperature, and/or hot count.
公开/授权文献
- US08638606B2 Substrate bias during program of non-volatile storage 公开/授权日:2014-01-28