发明申请
- 专利标题: METALLURGICAL CLAMSHELL METHODS FOR MICRO LAND GRID ARRAY FABRICATION
- 专利标题(中): 用于微地板阵列制造的金属冶金方法
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申请号: US13588585申请日: 2012-08-17
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公开(公告)号: US20130072073A1公开(公告)日: 2013-03-21
- 发明人: Gareth Hougham , Gerard McVicker , Xiaoxiong Gu
- 申请人: Gareth Hougham , Gerard McVicker , Xiaoxiong Gu
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01R13/02
- IPC分类号: H01R13/02
摘要:
A structure and method for manufacturing the same for manufacturing a contact structure for microelectronics manufacturing including the steps of forming first and second metal sheets to form a plurality of outwardly extending bump each defining a cavity. Symmetrically mating the first and second metal sheets in opposing relation to each other to form upper and lower bumps each defining an enclosure therebetween wherein the mated first and second sheets form a contact structure. Coating the contact structure with an insulating material, and fabricating helix shaped contacts from upper and lower bumps. The helix shaped contacts having first and second portions being in minor image relationship to each other.
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