Invention Application
- Patent Title: PLASMA PROCESSING APPARATUS
- Patent Title (中): 等离子体加工设备
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Application No.: US13684416Application Date: 2012-11-23
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Publication No.: US20130075037A1Publication Date: 2013-03-28
- Inventor: Tatsuo MATSUDO , Shinji HIMORI
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Priority: JP2008-073376 20080321
- Main IPC: H01L21/3065
- IPC: H01L21/3065

Abstract:
A plasma processing apparatus includes a processing gas supplying unit for supplying a desired processing gas to a processing space between an upper electrode and a lower electrode which are disposed facing each other in an evacuable processing chamber. The plasma processing apparatus further includes a radio frequency (RF) power supply unit for applying an RF power to one of the lower and the upper electrode to generate plasma of the processing gas by RF discharge and an electrically conductive RF ground member which covers a peripheral portion of the electrode to which the RF power is applied to receive RF power emitted outwardly in radial directions from the periphery portion of the electrode to which the RF power is applied and send the received RF power to a ground line.
Public/Granted literature
- US08651049B2 Plasma processing apparatus Public/Granted day:2014-02-18
Information query
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