发明申请
- 专利标题： SPIN TRANSISTOR AND MEMORY
- 专利标题（中）： 旋转晶体管和存储器
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申请号： US13526007申请日： 2012-06-18
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公开(公告)号： US20130075843A1公开(公告)日： 2013-03-28
- 发明人: Tomoaki Inokuchi , Takao Marukame , Tetsufumi Tanamoto , Hideyuki Sugiyama , Mizue Ishikawa , Yoshiaki Saito
- 申请人： Tomoaki Inokuchi , Takao Marukame , Tetsufumi Tanamoto , Hideyuki Sugiyama , Mizue Ishikawa , Yoshiaki Saito
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-209915 20110926
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
A spin transistor according to an embodiment includes: a first magnetic layer formed above a substrate and serving as one of a source and a drain; an insulating film having a lower face facing to an upper face of the first magnetic layer, an upper face opposed to the lower face, and a side face different from the lower and upper faces, the insulating film being formed on the upper face of the first magnetic layer and serving as a channel; a second magnetic layer formed on the upper face of the insulating film and serving as the other one of the source and the drain; a gate electrode formed along the side face of the insulating film; and a gate insulating film located between the gate electrode and the side face of the insulating film.
公开/授权文献
- US09112139B2 Spin transistor and memory 公开/授权日：2015-08-18
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