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发明申请
US20130075873A1 GLASS COMPOSITION FOR PROTECTING SEMICONDUCTOR JUNCTION, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
用于保护半导体结的玻璃组合物，制造半导体器件和半导体器件的方法

GLASS COMPOSITION FOR PROTECTING SEMICONDUCTOR JUNCTION, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
摘要：
Provided is a glass composition for protecting a semiconductor junction which contains at least SiO2, Al2O3, ZnO, CaO and 3 mol % to 10 mol % of B2O3, and substantially contains none of Pb, P, As, Sb, Li, Na and K. It is preferable that a content of SiO2 falls within a range of 32 mol % to 48 mol %, a content of Al2O3 falls within a range of 9 mol % to 13 mol %, a content of ZnO falls within a range of 18 mol % to 28 mol %, a content of CaO falls within a range of 15 mol % to 23 mol %, and a content of B2O3 falls within a range of 3 mol % to 10 mol %.
摘要（中）：

本发明提供一种用于保护半导体结的玻璃组合物，其至少包含SiO 2，Al 2 O 3，ZnO，CaO和3mol％至10mol％的B 2 O 3，并且基本上不含Pb，P，As，Sb，Li，Na和K 优选SiO 2的含量在32摩尔％〜48摩尔％的范围内，Al 2 O 3的含量在9摩尔％〜13摩尔％的范围内，ZnO的含量在18摩尔的范围内 〜28摩尔％，CaO的含量在15摩尔％〜23摩尔％的范围内，B 2 O 3的含量在3摩尔％〜10摩尔％的范围内。

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