发明申请
- 专利标题： SEMICONDUCTOR INTERCONNECT STRUCTURE HAVING ENHANCED PERFORMANCE AND RELIABILITY
- 专利标题（中）： 具有增强性能和可靠性的半导体互连结构
-
申请号： US13246904申请日： 2011-09-28
-
公开(公告)号： US20130075908A1公开(公告)日： 2013-03-28
- 发明人: Cyril Cabral, JR. , Geraud Jean-Michel Dubois , Daniel C. Edelstein , Takeshi Nogami , Daniel P. Sanders
- 申请人： Cyril Cabral, JR. , Geraud Jean-Michel Dubois , Daniel C. Edelstein , Takeshi Nogami , Daniel P. Sanders
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L23/482
- IPC分类号： H01L23/482 ; H01L21/768
摘要：
An interconnect structure and method for fabricating the interconnect structure having enhanced performance and reliability, by minimizing oxygen intrusion into a seed layer and an electroplated copper layer of the interconnect structure, are disclosed. At least one opening in a dielectric layer is formed. A sacrificial oxidation layer disposed on the dielectric layer is formed. The sacrificial oxidation layer minimizes oxygen intrusion into the seed layer and the electroplated copper layer of the interconnect structure. A barrier metal layer disposed on the sacrificial oxidation layer is formed. A seed layer disposed on the barrier metal layer is formed. An electroplated copper layer disposed on the seed layer is formed. A planarized surface is formed, wherein a portion of the sacrificial oxidation layer, the barrier metal layer, the seed layer, and the electroplated copper layer are removed. In addition, a capping layer disposed on the planarized surface is formed.