发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13424791申请日： 2012-03-20
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公开(公告)号： US20130075912A1公开(公告)日： 2013-03-28
- 发明人: Satoshi Wakatsuki , Ichiro Mizushima , Atsuko Sakata , Masayuki Kitamura
- 申请人： Satoshi Wakatsuki , Ichiro Mizushima , Atsuko Sakata , Masayuki Kitamura
- 优先权： JP2011-207829 20110922
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/20
摘要：
According to one embodiment, a method for manufacturing a semiconductor device includes: forming a silicon oxide film on a semiconductor substrate; forming a via in the silicon oxide film; forming a contact layer inside the via; forming a silicon layer on the contact layer; and forming a tungsten film embedded in the via by making a tungsten-containing gas react with the silicon layer.