发明申请
- 专利标题： FORMING A PROTECTIVE FILM ON A BACK SIDE OF A SILICON WAFER IN A III-V FAMILY FABRICATION PROCESS
- 专利标题（中）： 在III-V家族制造工艺中形成硅片背面的保护膜
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申请号： US13244340申请日： 2011-09-24
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公开(公告)号： US20130078783A1公开(公告)日： 2013-03-28
- 发明人: Chun-Feng Nieh , Chung-Yi Yu , Hung-Ta Lin
- 申请人： Chun-Feng Nieh , Chung-Yi Yu , Hung-Ta Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
Provided is a method of fabricating a semiconductor device. The method includes forming a first dielectric layer over a first surface and a second surface of a silicon substrate. the first and second surfaces being opposite surfaces. A first portion of the first dielectric layer covers the first surface of the substrate, and a second portion of the first dielectric layer covers the second surface of the substrate. The method includes forming openings that extend into the substrate from the first surface. The method includes filling the openings with a second dielectric layer. The method includes removing the first portion of the first dielectric layer without removing the second portion of the first dielectric layer.
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