Methods of performing a read retry, including reading a non-volatile memory with new read parameters, and devices for performing such methods are disclosed. The read retry operation and/or subsequent read retry operation may be initiated and/or completed before it is determined that such read retry operation is warranted. For example, a page of a NAND flash memory may be read in a read retry operation with new read voltage levels applied to a word line of the page. For example, a read retry operation may be performed on a target page prior to determining errors of a previous read page of data of the target page are uncorrectable via an ECC operation.