发明申请
- 专利标题: MONOLITHICALLY INTEGRATED HEMT AND SCHOTTKY DIODE
- 专利标题(中): 单一组合HEMT和肖特基二极管
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申请号: US13267552申请日: 2011-10-06
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公开(公告)号: US20130087803A1公开(公告)日: 2013-04-11
- 发明人: Isik C. Kizilyalli , Hui Nie , Andrew P. Edwards , Linda Romano , David P. Bour , Richard J. Brown , Thomas R. Prunty
- 申请人: Isik C. Kizilyalli , Hui Nie , Andrew P. Edwards , Linda Romano , David P. Bour , Richard J. Brown , Thomas R. Prunty
- 申请人地址: US CA San Jose
- 专利权人: EPOWERSOFT, INC.
- 当前专利权人: EPOWERSOFT, INC.
- 当前专利权人地址: US CA San Jose
- 主分类号: H01L29/778
- IPC分类号: H01L29/778 ; H01L21/335
摘要:
An integrated device including a III-nitride HEMT and a Schottky diode includes a substrate comprising a first III-nitride material and a drift region comprising a second III-nitride material coupled to the substrate and disposed adjacent to the substrate along a vertical direction. The integrated device also includes a first barrier layer coupled to the drift region and a channel layer comprising a third III-nitride material having a first bandgap and coupled to the barrier layer. The integrated device further includes a second barrier layer characterized by a second bandgap and coupled to the channel layer and a Schottky contact coupled to the drift region. The second bandgap is greater than the first bandgap.