发明申请
- 专利标题： NITROGEN PASSIVATION OF SOURCE AND DRAIN RECESSES
- 专利标题（中）： 污染源和漏水侵蚀的氮化物
-
申请号： US13267648申请日： 2011-10-06
-
公开(公告)号： US20130087857A1公开(公告)日： 2013-04-11
- 发明人: Jia-Yang Ko , Ching-Chien Huang , Ying-Han Chiou , Ling-Sung Wang
- 申请人： Jia-Yang Ko , Ching-Chien Huang , Ying-Han Chiou , Ling-Sung Wang
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. In an example, the method includes providing a substrate; forming a gate structure over the substrate; removing portions of the substrate to form a first recess and a second recess in the substrate, such that the gate structure interposes the first recess and the second recess; forming a nitrogen passivation layer in the substrate, such that the first recess and the second recess are defined by nitrogen passivated surfaces of the substrate; and forming doped source and drain features over the nitrogen passivated surfaces of the first recess and the second recess, the doped source and drain features filling the first and second recesses.
公开/授权文献
- US08659089B2 Nitrogen passivation of source and drain recesses 公开/授权日：2014-02-25
信息查询
IPC分类:
