发明申请
US20130087859A1 Work Function Adjustment By Carbon Implant In Semiconductor Devices Including Gate Structure
有权
包括门结构在内的半导体器件中的碳植入工作功能调整
- 专利标题： Work Function Adjustment By Carbon Implant In Semiconductor Devices Including Gate Structure
- 专利标题（中）： 包括门结构在内的半导体器件中的碳植入工作功能调整
-
申请号： US13253268申请日： 2011-10-05
-
公开(公告)号： US20130087859A1公开(公告)日： 2013-04-11
- 发明人: Yue Liang , Dechao Guo , William K. Henson , Shreesh Narasimha , Yanfeng Wang
- 申请人： Yue Liang , Dechao Guo , William K. Henson , Shreesh Narasimha , Yanfeng Wang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/266
- IPC分类号： H01L21/266 ; H01L27/092
摘要：
A device including a p-type semiconductor device and an n-type semiconductor device on a semiconductor substrate. The n-type semiconductor device includes a gate structure having a high-k gate dielectric. A carbon dopant in a concentration ranging from 1×1016 atoms/cm3 to 1×1021 atoms/cm3 is present at an interface between the high-k gate dielectric of the gate structure for the n-type semiconductor device and the semiconductor substrate. Methods of forming the aforementioned device are also disclosed.
公开/授权文献
信息查询
IPC分类:
