Invention Application
US20130089679A1 PLASMA-ENHANCED DEPOSITION OF MANGANESE-CONTAINING FILMS FOR VARIOUS APPLICATIONS USING AMIDINATE MANGANESE PRECURSORS
审中-公开
使用氨基甲酸锰前体的各种应用的含锰膜的等离子体增强沉积
- Patent Title: PLASMA-ENHANCED DEPOSITION OF MANGANESE-CONTAINING FILMS FOR VARIOUS APPLICATIONS USING AMIDINATE MANGANESE PRECURSORS
- Patent Title (中): 使用氨基甲酸锰前体的各种应用的含锰膜的等离子体增强沉积
-
Application No.: US13269140Application Date: 2011-10-07
-
Publication No.: US20130089679A1Publication Date: 2013-04-11
- Inventor: Christian Dussarrat , Vincent M. Omarjee , Clement Lansalot-Matras
- Applicant: Christian Dussarrat , Vincent M. Omarjee , Clement Lansalot-Matras
- Applicant Address: FR Paris US CA Fremont
- Assignee: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude,American Air Liquide, Inc.
- Current Assignee: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude,American Air Liquide, Inc.
- Current Assignee Address: FR Paris US CA Fremont
- Main IPC: C23C16/06
- IPC: C23C16/06
Abstract:
The disclosure relates to a process for depositing a Manganese-containing film comprising the step of providing a metal guanidinate and/or metal amidinate precursor, suitable for plasma deposition at temperature equal or lower than 500 degrees C., to a plasma deposition process comprising a deposition temperature equal or lower than 500 degrees C.
Information query
IPC分类:
