发明申请
- 专利标题: Metal-Oxide-Metal Capacitor Structure
- 专利标题(中): 金属 - 氧化物 - 金属电容器结构
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申请号: US13274122申请日: 2011-10-14
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公开(公告)号: US20130093047A1公开(公告)日: 2013-04-18
- 发明人: Jiun-Jie Huang , Ling-Sung Wang , Chi-Yen Lin
- 申请人: Jiun-Jie Huang , Ling-Sung Wang , Chi-Yen Lin
- 申请人地址: TW Hsin-chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-chu
- 主分类号: H01L29/02
- IPC分类号: H01L29/02
摘要:
A metal-oxide-metal capacitor comprises a first electrode, a second electrode, a plurality of first fingers and a plurality of second fingers. Each first finger and its corresponding second finger are in parallel and separated by a low k dielectric material. A guard ring is employed to enclose the metal-oxide-metal capacitor so as to prevent moisture from penetrating into the low k dielectric material.
公开/授权文献
- US08558350B2 Metal-oxide-metal capacitor structure 公开/授权日:2013-10-15
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